jiangsu changjiang electronics technology co., ltd to-92 plastic-encapsulate transistors 2SC1318A transistor (npn) features collector output c apacitance : cob =11 pf (typ),20 pf (max) maximum ratings ( t a =25 unless otherwise note ) symbol parameter value unit v cbo collector-base voltage 80 v v ceo collector-emitter voltage 70 v v ebo emitter-base voltage 5 v i c collector current -continuous 500 ma p c collector power dissipation 750 mw t j junction temperature 150 t stg storage temperature -55-150 electrical characteristics (t a=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c =10 a,i e =0 80 v collector-emitter breakdown voltage v (br)ceo i c =2ma,i b =0 70 v emitter-base breakdown voltage v (br)ebo i e =10 a,i c =0 5 v collector cut-off current i cbo v cb =20v,i e =0 0.1 a h fe(1) v ce =10v,i c =150ma 85 340 dc current gain h fe(2) v ce =10v,i c =500ma 40 collector-emitter saturation voltage v ce(sat) i c =300ma,i b =30ma 0.6 v base-emitter saturation voltage v be(sat) i c =300ma,i b =30ma 1.5 v transition frequency f t v ce =10v,i c =50ma,f=200mhz 120 mhz collector output capacitance c ob v cb =10v,i e =0,f=1mhz 11 20 pf classification of h fe(1) rank q r s range 85-170 120-240 170-340 to-92 1. emitter 2. collector 3. base www.cj-elec.com 1 c , dec ,2015
min max min m ax a 3.300 3.700 0.130 0.146 a1 1.100 1.400 0.043 0.055 b 0.380 0.550 0.015 0.022 c 0.360 0.510 0.014 0.020 d 4. 300 4.700 0.169 0.185 d1 3.430 0.135 e 4.300 4.700 0.169 0.185 e e1 2.440 2.640 0.096 0.104 l 14.100 14.500 0.555 0.571 1.600 0.063 h 0.000 0.380 0.000 0.015 symbol dimensions in millimeters dimensions in inches 1.270 typ 0.050 typ to-92 package outline dimensions to-92 suggested pad lay out www.cj-elec.com 2 c , dec ,2015
to-92 7 d s h d q g 5 h h o z z z f m h o h f f r p 3 c,dec,2015
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